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• EEE 41 (First Semester SY 2019-2020)
• EEE 41 (First Semester SY 2018-2019)
• EEE 41 (First Semester SY 2017-2018)
• EEE 41 (First Semester SY 2016-2017)
• EEE 41 (First Semester SY 2015-2016)
• EEE 41 (First Semester SY 2014-2015)
• EEE 41 (First Semester SY 2013-2014)
• EEE 41 (First Semester SY 2012-2013)

Rationale

Modern electronics, responsible for the unprecedented growth in ICT technologies, are based on semiconductor devices, specifically the solid-state transistor. EEE 41 provides the student with the tools and methodologies to systematically analyze and understand the operation of existing, as well as new semiconductor devices. This deep understanding will allow the student to use these existing as well as yet-to-be-discovered devices in applications within the current EEE fields, as well as potentially, create new fields and applications.

Course Aims and Outcomes

The aim of EEE 41 is to give the student the ability and analytical tools to intelligently use current (diodes, transistors, etc.) and future semiconductor devices as building blocks in the creation and implementation of electronic circuits and systems.

After taking EEE 41, the EEE student must be able to:

• Explain and quantitatively model the behavior of charges inside semiconductor materials
• Explain and differentiate the components of the electric current flowing through a PN junction
• Understand the mechanisms that lead towards the I-V characteristic of a PN junction diode
• Analytically derive the ideal diode model, and explain its limitations
• Explain and model quantitatively the various non-idealities present in real semiconductor diodes
• Derive the small-signal and large-signal (DC and transient) behavior of semiconductor diodes
• Explain the difference between active and passive devices, as well as the differences between diodes and transistors
• Define “transistor action”
• Describe the physical structure of BJTs and MOSFETs and explain the effects of these structures on the transistor’s behavior
• Explain the difference in charge transport in BJTs and MOSFETs
• Explain and differentiate the components of the electric current flowing in BJTs and MOSFETs
• Analytically derive the ideal transistor input, output and transfer characteristics of BJTs and MOSFETs, and explain its limitations
• Explain and model quantitatively the various non-idealities present in real semiconductor transistors (BJTs and MOSFETs)
• Derive the small-signal and large-signal (DC and transient) behavior of semiconductor transistors (BJTs and MOSFETs)