- Introduction to Semiconductor Devices and Circuits
- Lecture Schedules:
- THR (Tue/Thu, 8:30am – 9:30am, Rm 120)
- THD (Tue/Thu, 10:00am – 11:00am, LC1)
- WFD (Wed/Fri, 10:00am – 11:00am, Rm 120)
- Lecture Instructors
- Maria Theresa de Leon (theresa.de.leon@eee.upd.edu.ph)
- Marc Rosales (marc.rosales@eee.upd.edu.ph)
- DC Instructors
- Rico Jossel Maestro (rico.maestro@eee.upd.edu.ph)
- Ryan Albert Antonio (ryan.albert.antonio@eee.upd.edu.ph)
- Aldrin Rolf Ison (aldrin.rolf.ison@eee.upd.edu.ph)
Announcements
- 8/7: Welcome to EEE 41!
- 8/8: UVLE section: EEE 41 – 1S1718; Enrolment Key: semiconductor
- 8/15: Anything posted in UVLE will not be graded so please do not hesitate to post questions 🙂
- 8/15: THR lecture classes will be held in Rm 120 starting Aug 17.
- 8/17: You will need to be logged in to your EEE account to access the lecture slides.
- 8/18: HW 1 additional information is added for problem 3.c.
- 8/27: HW 2 – No need to submit problem 2 this Tuesday Aug 29, 2017. Save it for HW 3. Also, no need to answer problem 3-f.
- 9/20: No class for WFD on Friday, 9/22. Use the time to review for the exam.
- 11/2: No class for WFD on Friday, 11/3, and for THR and THD on Tuesday, 11/7. Use the time to review for the second exam.
- 11/8: The second exam will be a 3-hour exam (1-4pm on Nov 11). Please plan accordingly.
- 12/23: Some announcements:
- The cutoff for passing (grade of 3.00) is 50 using the rounded up grade.
- Those who have a rounded up grade of 40 to 49 will take a removal exam.
- For those who have excused missed long exam, your total exam grade (75% of the final grade) is computed by averaging the other exams. There is no need to take the removal exam in replacement of the missed exam.
- The deadline for rechecking of exams and other papers is on 5 January 2018, 3PM.
- The removal exam will be on 8 January 2018, 1PM.
- 1/12: These students PASSED the removal exam:
2012-47896 2012-66062 2013-43486 2013-48229 2013-49236 2013-62689 2013-70108 2014-09238 2014-20204 2014-20288 2014-54891 2014-55259 2014-89351 2015-00231 2015-02222 2015-04635 2015-05268 2015-05350 2015-05602 2015-11050 2015-11497 2015-11557 2015-12065 2015-13359 2015-13675 2015-14206
- 1/12: The following students must see me (Tess) in Rm 225 within the day:
-
2011-14899 2014-11065 2015-07560
-
Exam Dates
- First Exam: September 23, 2017 (1:00 – 3:00 pm)
- Second Exam: November 11, 2017 (1:00 – 3:00 pm)
- Third Exam: December 16, 2017 (1:00 – 3:00 pm)
Grades Distribution
- 25% – DC grade
- 75% – Exams
Grade Sheet
This will be updated almost everyday to reflect the grades from the DC. If there are inquiries, concerns or inconsistencies in the grade sheet, contact your DC instructor as soon as possible.
Link to grade sheet
Class Lectures
| Title | Slides | ||
|---|---|---|---|
| 1 | Introduction | ||
| Semiconductor Fundamentals (3 weeks) | |||
| 2 | Semiconductor materials; Si structure; Electrons and holes | ||
| 3 | Energy-band model; Band-gap energy; Density of states; Doping | ||
| 4 | Thermal equilibrium; Carrier distributions and Concentrations; Determination of the Fermi Energy | ||
| 5 | Carrier properties and drift; Carrier scattering; Drift current; Resistivity | ||
| 6 | Electrostatic potential; Carrier diffusion; Generation and recombination | ||
| 7 | Generation and recombination; Excess carrier concentrations; Minority Carrier Lifetime | annotated | |
| 8 | Minority carrier lifetime; Continuity equations; Minority carrier diffusion; Quasi-Fermi levels | ||
| Metal-Semiconductor Contacts (1 week) | |||
| 9 | Work function; metal-semiconductor band diagram; depletion width | annotated | |
| 10 | I-V characteristics; Practical ohmic contacts; small-signal capacitance | annotated | |
| 11 | Review for Exam #1 | ||
| PN Junction Diodes (3 weeks) | |||
| 12 | Electrostatics | annotated | |
| 13 | I-V characteristics | annotated | |
| 14 | Reverse-bias current; reverse-bias breakdown | annotated | |
| 15 | Deviations from the ideal: R-G current, series resistance, high-level injection; narrow-base diode | annotated | |
| 16 | Charge control model; Small-signal model; transient response: turn-off | annotated | |
| 17 | Transient response: turn-on; diode applications | annotated | |
| 18 | Diode circuits | annotated | |
| Bipolar Junction Transistors (3 weeks) | |||
| 19 | Introduction; BJT fundamentals | ||
| 20 | Ideal transistor analysis; Ebers-Moll model | ||
| 21 | Review for Exam #2 | ||
| 22 | Deviations from the ideal; Gummel plot; Modern BJT structures | annotated | |
| 23 | Charge control model; base transit time; Small signal model; Cutoff frequency; | annotated | |
| 24 | BJT transient response | annotated | |
| 25 | BJT biasing and sample circuits | annotated | |
| Metal Oxide Semiconductor (MOS) Capacitors (1 week) | |||
| 26 | MOS Structure; energy band diagram; Electrostatics | ||
| 27 | Capacitance vs. voltage characteristic | ||
| Metal Oxide Semiconductor (MOS) Field-Effect Transistors (FETs) (3 weeks) | |||
| 28 | MOSFET structure and operation; Qualitative theory; long-channel I-V characteristics | ||
| 29 | Modified long-channel I-V characteristics; Body effect parameter; PMOS I-V; small-signal model | ||
| 30 | MOS biasing and sample circuits | ||
| 31 | Review for Exam#3 |
Discussion Class Slides and Homework
| Title | Questions only | With solution | |
|---|---|---|---|
| DC 01 | Electromagnetics Review & Crystal Lattice Structures | pdf Quiz Soln |
|
| HW 01 | Fermi Level and Carrier Concentrations | ||
| DC 02 | Fermi Level and Carrier Concentrations | See HW01 solutions Quiz Soln |
|
| HW 02 | Resistivity, Band Bending, Drift and Diffusion Current | hw2 plot correction |
|
| HW 03 | Carrier practice, Diffusion, R-G and Math practice | ||
| DC 03 | Carrieri Concentration Practice, Resistivity, Drift Current Density | pdf Quiz Soln |
|
| HW 04 | Minority Carrier Diffusion Equation, Quasi-Fermi Level | ||
| DC 04 | Band Bending, Drift and Diffusion | pdf Quiz Soln |
|
| HW 05 | MS Electrostatics, MS I-V, MS C-V | ||
| DC 05 | Minority Carrier Diffusion | pdf Quiz soln |
|
| PS 01 | Practice | ||
| DC 06 | MS Contact | See HW5 solution | Quiz Soln |
| HW 06 | PN Electrostatics, PN I-V | ||
| DC 07 | PN Junctions | pdf Quiz Soln |
|
| HW 07 | PN Junction Concepts, Current Concepts and Non-idealities | ||
| DC 08 | PN Diode I-V | pdf Quiz Soln |
|
| HW 08 | PN Junction Concepts and Transient Response | ||
| DC 09 | PN I-V and Non-idealities (Quiz Bee) | pdf Quiz Soln |
|
| HW 09 | BJT Fundamentals, Device Parameters, BJT Static Characteristics | ||
| DC 10 | PN Charge Control Theory, Small Signal Admittance, Transient Response | See HW09 solutions Quiz Soln |
|
| DC 11 | BJT Fundamentals | Solutions in questions already Quiz Soln |
|
| DC 12 | BJT Currents, Ebers-Moll Model and Diode Circuits | Solutions in questions already | |
| PS 02 | Practice | ||
| HW 10 | BJT Non-idealities, BJT Transient Response, BJT Small-signal and Circuit Analysis | ||
| HW 11 | MOS | See HW8 of AY1617 See Finals Solution of AY1516 |
|
| DC 13 | BJT Non-idealities, Transient Response | Solutions in questions already Quiz Soln |
|
| DC 14 | BJT Biasing and Small-signal Analysis | ppt | Quiz Soln |
| DC 15 | MOS-C | pptx | Quiz Soln |
| DC 16 | MOSFET | pptx |
Textbook
- Semiconductor Device Fundamentals by R. F. Pierret (Addison Wesley, 1996)
References
- Modern Semiconductor Devices for Integrated Circuits by Chenming Hu (Prentice Hall, 2010)
- Solid State Electronic Devices by B. G. Streetman & S. Banerjee (Prentice Hall, 2000)
- Fundamentals of Modern VLSI Devices by Y. Taur & T. H. Ning (Cambridge University Press, 1998)
- Semiconductor Devices by K. Kano (Prentice Hall, 1998)
- Introduction to Semiconductor Devices and Circuits, 2nd ed., by L. Sison (U.P. Press, 2008)