- Introduction to Semiconductor Devices and Circuits
- Lecture Schedules:
- THR (Tue/Thu, 8:30am – 9:30am, Rm 120)
- THD (Tue/Thu, 10:00am – 11:00am, Rm 120)
- Lecture/DC Instructors
- Maria Theresa de Leon (theresa.de.leon@eee.upd.edu.ph)
- Fredrick Angelo Galapon (fredrick.galapon@eee.upd.edu.ph)
- Christopher Santos (christopher.santos@eee.upd.edu.ph)
Announcements
- 7/30: Welcome to EEE 41!
- 8/9: You will need to be logged in to your EEE account to access the lecture slides.
- 8/14: Piazza class here. If you have not been automatically enrolled in the class, access code is in the Lecture 1 slides.
- 9/5: If you have any conflicts with the Exam 1 schedule and would like to request for early/late exam, please answer this form by September 14, Friday, 12nn.
- 9/20: The early exam (10am-12nn) and late exam (4-6pm) on Saturday will be held in Rm 420.
- 9/22: Exam 1 answer key here.
- 10/6: Class records can be found here.
- 10/6: Deadline for submission of LE1 papers with notes for rechecking is on October 10, 2018. Submit your papers on the drop box on Room 220.
- 10/19: The 2nd Long Exam will be on October 29, 2018 from 4:00 pm to 6:00 pm. Cheat sheet must be in A4 and with notes on one side only. For early/late exam requests, please answer this form by October 23, 2018. Walk-ins will not be accepted for the early/late exam. There will be a separate post confirming whose early/late exam requests are approved.
- 10/31: Exam 2 answer key here.
- 12/2: HW 05 is already uploaded. Deadline is on 5pm of December 7 but the drop box will be at Rm. 220 starting Tuesday so you can pass your work earlier if possible. This HW will be considered as a bonus HW that can help improve your HW grades.
- 12/13: Exam 3 answer key here.
Exam Dates
- First Exam: September 22, 2018, Saturday, 1-3pm
- Second Exam: (
October 27, 2018, Saturday, 1-3pm) October 29, 2018, Monday, 4-6pm - Third Exam: December 13, 2018, Thursday, 1-3pm
Grades Distribution
- 25% – DC grade
- 75% – Exams
Class Lectures
| Date | Title | Slides | Annotated Slides | |
|---|---|---|---|---|
| 1 | 8/7 | Introduction | ||
| Semiconductor Fundamentals (3 weeks) | ||||
| 2 | 8/9 | Semiconductor materials; Si structure; Electrons and holes | ||
| 3 | 8/14 | Energy-band model; Band-gap energy; Density of states; Doping | ||
| 4 | 8/16 | Thermal equilibrium; Carrier distributions and Concentrations; Determination of the Fermi Energy | ||
| 5 | 8/23 | Carrier properties and drift; Carrier scattering; Drift current; Resistivity | ||
| 6 | 8/28 | Electrostatic potential; Carrier diffusion; Generation and recombination | ||
| 7 | 8/30 | Generation and recombination; Excess carrier concentrations; Minority Carrier Lifetime | ||
| 8 | 9/4 | Minority carrier lifetime; Continuity equations; Minority carrier diffusion; Quasi-Fermi levels | ||
| Metal-Semiconductor Contacts (1 week) | ||||
| 9 | 9/6 | Work function; metal-semiconductor band diagram; depletion width | ||
| 10 | 9/11 | I-V characteristics; Practical ohmic contacts; small-signal capacitance | ||
| 11 | 9/13 | Review for Exam #1 | ||
| PN Junction Diodes (3 weeks) | ||||
| 12 | 9/18 | Electrostatics | ||
| 13 | 9/20 | I-V characteristics | ||
| 14 | 9/25 | Reverse-bias current; reverse-bias breakdown | ||
| 15 | 9/27 | Deviations from the ideal: R-G current, series resistance, high-level injection; narrow-base diode | ||
| 16 | 10/2 | Charge control model; Small-signal model; transient response: turn-off | ||
| 17 | 10/4 | Transient response: turn-on; diode applications | ||
| 18 | 10/9 | Diode circuits | ||
| Bipolar Junction Transistors (3 weeks) | ||||
| 19 | 10/11 | Introduction; BJT fundamentals | ||
| 20 | 10/16 | Ideal transistor analysis; Ebers-Moll model | ||
| 21 | 10/18 | Review for Exam #2 | ||
| 22 | 10/23 | Deviations from the ideal; Gummel plot; Modern BJT structures | ||
| 23 | 10/25 | Charge control model; base transit time; Small signal model; Cutoff frequency; | ||
| 24 | BJT transient response | |||
| 25 | 10/30 | BJT biasing and sample circuits | ||
| Metal Oxide Semiconductor (MOS) Capacitors (1 week) | ||||
| 26 | 11/6 | MOS Structure; energy band diagram; Electrostatics | ||
| 27 | 11/8 | Capacitance vs. voltage characteristic | pdf pdf (additional) | |
| Metal Oxide Semiconductor (MOS) Field-Effect Transistors (FETs) (3 weeks) | ||||
| 28 | 11/13 | MOSFET structure and operation; Qualitative theory; long-channel I-V characteristics | ||
| 29 | 11/15 | Modified long-channel I-V characteristics; Body effect parameter; PMOS I-V; small-signal model | ||
| 30 | 11/20 | Body effect parameter; PMOS I-V; small-signal model | ||
| 31 | 11/22 | Sub-threshold leakage current; gate-length scaling; Velocity saturation | ||
| 32 | 11/27 | MOS biasing and sample circuits | ||
| 33 | 11/29 | Review for Exam#3 |
Discussion Class Slides and Homework
| Title | Questions only | With solution | |
|---|---|---|---|
| DC 00 | Introduction | ||
| DC 01 | Electromagnetics Review & Crystal Lattice Structures | ||
| DC 02 | Fermi Level and Carrier Concentrations | ||
| DC 03 | Carrier Action: Drift | ||
| HW 01 | Carrier Concentrations, Fermi Level, and Drift | ||
| DC 04 | Carrier Diffusion and Band Bending | ||
| DC 05 | Minority Carrier Diffusion | ||
| HW 02 | Carrier Action | ||
| DC 06 | MS Contact | ||
| DC 07 | PN Junction Electrostatics | ||
| DC 08 | PN Diode I-V | ||
| HW 03 | Ideal PN Junction Diodes | ||
| DC 09 | PN Nonidealities | ||
| DC 10 | PN Charge Control Theory, Small Signal Admittance, Transient Response | ||
| HW 04 | PN Junction Diodes | ||
| DC 11 | Diode Circuits | ||
| DC 12 | BJT Fundamentals and Currents | ||
| DC 13 | BJT Ebers-Moll Model and Non-Idealities | ||
| DC 14 | BJT Circuit Analysis and MOS Basics | ||
| DC 15 | MOS Capacitors | ||
| HW 05 | BJT and MOS-C | ||
| DC 16 | MOS Field Effect Transistors |
Textbook
- Semiconductor Device Fundamentals by R. F. Pierret (Addison Wesley, 1996)
References
-
- Modern Semiconductor Devices for Integrated Circuits by Chenming Hu (Prentice Hall, 2010)
- Solid State Electronic Devices by B. G. Streetman & S. Banerjee (Prentice Hall, 2000)
-
- Fundamentals of Modern VLSI Devices by Y. Taur & T. H. Ning (Cambridge University Press, 1998)
-
- Semiconductor Devices by K. Kano (Prentice Hall, 1998)
- Introduction to Semiconductor Devices and Circuits, 2nd ed., by L. Sison (U.P. Press, 2008)